savantic semiconductor product specification silicon npn power transistors 2sc1398 2SC1398A d escription with to-220 package 2sc1398 is complement to type 2sa748 large collector power dissipation applications for medium power amplifier applicattions pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter 70 v 2sc1398 50 v ceo collector- emitter voltage 2SC1398A open base 70 v v ebo emitter-base voltage open collector 5 v i c collector current 2 a i cm collector current-peak 3 a p c collector power dissipation t c =25 15 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2sc1398 2SC1398A characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2sc1398 50 v (br)ceo collector-emitter breakdown voltage 2SC1398A i c =10ma ,i b =0 70 v v (br)cbo collector- base breakdown voltage i c =1ma ,i e =0 70 v v cesat collector-emitter saturation voltage i c =1a; i b =0.1a 0.6 1.0 v v besat base-emitter saturation voltage i c =2a; i b =0.2a 1.0 1.5 v i cbo collector cut-off current v cb =40v; i e =0 1 a i ceo collector cut-off current v ce =20v; i c =0 100 a i ebo emitter cut-off current v eb =5v; i c =0 100 a h fe-1 dc current gain i c =0.1a ; v ce =5v 30 2sc1398 50 220 h fe-2 dc current gain 2SC1398A i c =1a ; v ce =5v 50 160 f t transition frequency i c =0.5a ; v ce =5v 120 mhz h fe-2 classifications type no. p q r 2sc1398 50-100 80-160 120-220 2SC1398A 50-100 80-160
savantic semiconductor product specification 3 silicon npn power transistors 2sc1398 2SC1398A package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm)
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